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| 7MBR100SD060 PIM/Built-in converter with thyristor and brake (S series) 600V / 100A / PIM Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit IGBT Modules Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP PC VRRM VDRM VRRM IT(AV) ITSM Tjw VRRM IO IFSM I2t Tj Tstg Viso Continuous 1ms 1 device Condition Rating 600 20 100 200 100 400 600 20 50 100 200 600 800 800 100 1050 125 800 100 700 2450 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A C V A A A 2s C C V V N*m Brake Inverter Continuous 1ms 1 device Thyristor 50Hz/60Hz sine wave Tj=125C, 10ms half sine wave Converter 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N*m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR100SD060 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT VGT VTM VFM IRRM R B Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=100mA VGE=15V, Ic=100A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=100A VGE=15V RG=24 IF=100A chip terminal IF=100A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=50A, VGE=15V chip terminal VCC=300V IC=50A VGE=15V RG=51 VR=600V VDM=800V VRM=800V VD=6V, IT=1A VD=6V, IT=1A ITM=100A chip terminal IF=100A chip terminal VR=800V T=25C T=100C T=25/50C Characteristics Typ. Max. 250 200 5.5 7.8 8.5 1.8 2.15 2.6 10000 0.45 0.25 0.40 0.05 1.6 1.95 1.2 0.6 1.0 0.35 2.7 300 250 200 2.6 1.2 0.6 1.0 0.35 250 1.0 1.0 100 2.5 1.15 Unit A nA V V pF s Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage V ns A nA V s Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage 1.8 2.05 0.45 0.25 0.40 0.05 Brake Thyristor Converter 1.0 1.15 1.1 1.2 5000 495 3375 A mA mA mA V V V Thermistor Reverse current Resistance B value 1.5 250 520 3450 A K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 0.31 0.70 0.63 0.35 0.47 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) 7MBR100SD060 250 250 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) VGE= 20V 15V 200 12V 200 VGE= 20V 15V 12V Collector current : Ic [ A ] 150 Collector current : Ic [ A ] 150 100 100 10V 50 50 10V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 250 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) Tj= 25C 200 Tj= 125C 150 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 100 4 Ic=200A 2 Ic=100A Ic= 50A 50 0 0 1 2 3 4 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] 50000 [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 500 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=100A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 400 20 10000 Cies 300 15 5000 200 10 100 5 1000 Coes Cres 500 0 5 10 15 20 25 30 35 0 0 100 200 300 400 500 0 600 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24 , Tj= 25C 1000 1000 7MBR100SD060 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg= 24 , Tj= 125C ton ton toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff tr tr 100 100 tf tf 10 0 50 100 150 200 10 0 50 100 150 200 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=15V, Tj= 25C 5000 10 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24 ton Switching time : ton, tr, toff, tf [ nsec ] 1000 toff tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon(125C) 8 Eoff(125C) Eon(25C) 6 Eoff(25C) 4 100 tf 2 Err(125C) Err(25C) 10 10 100 300 0 0 50 100 150 200 Gate resistance : Rg [ ] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=15V, Tj= 125C 20 1200 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=24,Tj<=125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 15 1000 Collector current : Ic [ A ] 800 10 Eoff 600 SCSOA (non-repetitive pulse) 400 5 200 RBSOA (Repetitive pulse) 0 10 100 300 0 200 400 600 800 Err 0 Gate resistance : Rg [ W ] Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR100SD060 [ Inverter ] Forward current vs. Forward on voltage (typ.) 250 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=24 200 Tj=125C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 100 trr(125C) Irr(125C) trr(25C) Irr(25C) Forward current : IF [ A ] Tj=25C 150 100 50 10 0 0 1 2 3 5 0 50 100 150 200 Forward on voltage : VF [ V ] Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 250 300 [ Thyristor ] On-state current vs. On-state voltage (typ.) Tj= 25C 200 Tj= 125C Tjw= 125C Tjw= 25C 150 100 Instantaneous on-state current [ A ] 0.4 0.8 1.2 1.6 2.0 100 Forward current : IF [ A ] 10 50 5 0 0.0 2 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Instantaneous on-state voltage [ V ] Transient thermal resistance 5 200 100 [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ C/W ] 1 FWD[Inverter] Resistance : R [ k ] IGBT[Brake] Conv. Diode Thyristor IGBT[Inverter] 10 0.1 1 0.01 0.001 0.01 0.1 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [ C ] IGBT Module 7MBR100SD060 120 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) VGE= 20V 15V 12V [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) 120 VGE= 20V 100 15V 12V 100 Collector current : Ic [ A ] 80 Collector current : Ic [ A ] 80 60 60 40 40 10V 20 10V 20 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] 120 [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) Tj= 25C 100 Tj= 125C 80 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 60 4 40 Ic=100A 2 Ic= 50A Ic= 25A 20 0 0 1 2 3 4 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 20000 500 [ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25C 25 10000 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 400 20 Cies 300 15 1000 200 10 Coes Cres 100 5 100 0 5 10 15 20 25 30 35 0 0 50 100 150 200 250 0 300 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] IGBT Module Outline Drawings, mm 7MBR100SD060 Marking : White Marking : White Equivalent Circuit Schematic [ Converter ] 21 (P) [ Thyristor ] 26 [ Brake ] 22(P1) [ Inverter ] [ Thermistor ] 8 25 20 (Gu) 18 (Gv ) 16 (Gw) 9 1(R) 2(S) 3(T) 19(Eu) 7(B) 17(Ev ) 4(U) 15(Ew) 5(V) 6(W) 14(Gb) 23(N) 24(N1) 13(Gx) 12(Gy ) 11(Gz) 10(En) |
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